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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO- 92S 1.SOURCE K596 Si N-CHANNEL JUNCTION FET FEATURES Power dissipation PCM: 0.1W Tamb=25ae(c) Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol BVGDO VGS(off) IDSS |YFS| Ciss 2.GATE 3.DRAIN 123 unless otherwise specified(c) MIN -20 -0.6 100 0.4 1.2 3.5 -1.5 800 TYP MAX UNIT V V |I A mS pF Test conditions IG= -100|I A VDS= 5V , ID=1|I A VDS= 5 V , VGS=0 VDS= 5V , VGS=0, f=1KHz VDS=5V, VGS=0, f=1MHz VDS= 5 V, V =0 GS Output Capacitance CRSS 0.65 pF f = 1MHz IDSS Classification Classification IDSS (A) A 100-170 B 150-240 C 210-350 D 320-480 E 440-800 TO-92S PACKAGE OUTLINE DIMENSIONS D D1 |E A E b L e e1 Symbol A A1 b c D D1 E e e1 L |E Dimensions In Millimeters Min 1.240 0.660 0.380 0.360 3.850 2.970 3.010 1.270TYP 2.440 15.100 45TYP 2.640 15.500 Max 1.620 0.860 0.550 0.510 4.150 3.270 3.310 Min A1 Dimensions In Inches Max 0.064 0.034 0.022 0.020 0.163 0.129 0.130 0.050TYP 0.096 0.594 45TYP 0.104 0.610 0.056 0.026 0.015 0.014 0.152 0.117 0.119 c |
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